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MUR490E, MUR4100E
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3
Figure 4. Power Dissipation
0 2.01.0 3.0 5.0
2.0
4.0
6.0
8.0
0
4.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
P
F(AV)
Figure 5. Typical Capacitance
, AVERAGE POWER DISSIPATION (WATTS
)
(Capacitive
IPK
=20
IAV
dc
SQUAREWAVE
10
1.0
3.0
40
20
30
70
10
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
50
60
7.0
0
9.010
8.0
20 30 5040
TJ
= 25
°C
5.0
10
Load)
5.0
7.0
9.0
TJ= 175°C
t0
t1
t2
t
VDD
ID
IL
BVDUT
MERCURY
SWITCH
Figure 6. Test Circuit Figure 7. Current?Voltage Waveforms
+VDD
DUT
40 H COIL
VD
IL
S1
ID
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD
power supply while the diode is in
breakdown (from t1
to t
2) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1
was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
information obtained for the MUR8100E (similar die
construction as the MUR4100E Series) in this test circuit
conducting a peak current of one ampere at a breakdown
voltage of 1300 V, and using Equation (2) the energy
absorbed by the MUR8100E is approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
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相关代理商/技术参数
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制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SWITCHMODE Ultrafast Power Rectifier
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制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:ULTRAFAST RECTIFIERS 4.0 AMPS, 900 - 1000 VOLTS
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制造商:ON Semiconductor 功能描述:
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功能描述:整流器 50V 50A Super Fast Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MUR5005R
功能描述:整流器 50V 50A REV Leads Super Fast Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
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功能描述:整流器 100V 50A Super Fast Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
MUR5010R
功能描述:整流器 100V 50A REV Leads Super Fast Recovery RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
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制造商:Solid State Devices Inc (SSDI) 功能描述:D0-5 STUD ULTRAFAST RECTIFIER 50 AMP